High-temperature electrical properties of polymer-derived ceramic SiBCN thin films fabricated by direct writing

The in situ temperature monitoring of hot components in harsh environments remains a challenging task. In this study, SiBCN thin-film resistance grids with thicknesses of 1.8 μm were fabricated on alumina substrates via direct writing. Owing to their dense microscopic morphology and extremely high graphitisation level, the produced SiBCN films exhibited large high-temperature oxidation resistance and electrical conductivity. The resistance–temperature, stability, and repeatability characteristics of these films were examined in an aerobic environment at temperatures up to 800 °C. The obtained results revealed that the thermistor resistance decreased monotonously with increasing temperature from room temperature to 800 °C. The SiBCN film resistance variations observed during repeated temperature cycling in the regions of 505–620 °C and 610–720 °C were 0.09% and 1.7%, respectively. The high cyclability and stability of the SiBCN thin film thermistor suggested its potential applicability for the in situ temperature monitoring of hot components in harsh environments.     

High ultraviolet transparent conducting electrodes formed using tantalum oxide/Ag multilayer

We investigated the optical and electrical properties of Ta₂O₅/Ag/Ta₂O₅ films as functions of the thicknesses of the Ta₂O₅ and Ag layers. It was found that with an increase in the thicknesses of the Ta₂O₅ and Ag layers from 10 to 40 nm and from 12 to 24 nm, respectively, the sheet resistance, carrier concentration, electron mobility, and resistivity of the Ta₂O₅/Ag/Ta₂O₅ film varied from 2.02 to 8.95 Ω/sq, 5.74 × 10²¹ to 2.92 × 10²² cm^–3, from 13.21 to 24.07 cm²/V·s, and from 8.89 × 10^-6 to 8.24 × 10^-5 Ω cm, respectively. The average transmittance (T_av) of the multilayer samples ranged from 57.18% to 93.99%, and it depended on the Ta₂O₅ and Ag layer thicknesses. The highest T_av of 93.99% was observed for the film with 35 nm thick Ta₂O₅ and 18 nm thick Ag layers, and the peak Haacke's figure of merit (157.04 × 10^–3 Ω^–1) was obtained for 20 nm thick Ta₂O₅ and 21 nm thick Ag layers. Ta₂O₅ (100 nm) and Ta₂O₅/Ag/Ta₂O₅ (20 nm/21 nm/20 nm) samples had optical bandgaps of 4.70 and 4.45 eV, respectively. Film Wizard simulations were conducted to understand the dependence of the transmittance of the multilayer on the thicknesses of the Ta₂O₅ and Ag layers, and phasor analyses were performed to determine how the transmittance of the Ta₂O₅/Ag/Ta₂O₅ (20 nm/21 nm/20 nm) film depended on the Ta₂O₅ layer's thickness.     

Preparation and properties of AZO/PS/AZO tri-layer transparent conductive film with a light-trapping structure

The light-trapping structure is an effective method to increase solar light capture efficiency in the solar cells. In this study, Al-doped ZnO (AZO)/polystyrene (PS)/AZO tri-layer transparent conductive film with light-trapping structure was fabricated by magnetron sputtering and liquid phase methods. The structural, optical and electrical properties of the AZO films could be controlled by different growth conditions. When the sputtering pressure of the under-layer AZO film was 0.2 Pa, the discharge voltage was around 80 V, which was within the optimal process window for obtaining AZO film with high crystallinity. The optimal under-layer AZO film had a large surface roughness and a very low static water contact angle of 75.71°, promoting the relatively uniform distribution of PS spheres. Under this sputtering condition, the prepared AZO/PS/AZO tri-layer film had the highest crystallinity and least point defects. The highest carrier concentration and Hall mobility are 3.0 × 10²¹ cm^-3and 5.39 cm² V^-1 s^-1, respectively. Additionally, a transparent conductive film with the lowest resistivity value (3.88 × 10^-4 Ω cm) and the highest average haze value (26.5%) was obtained by optimizing the process parameters. These properties were comparable to or exceed the reported values of surface-textured SnO₂-based as well as ZnO-based TCOs films, making our films suitable for transparent electrode applications, especially in thin-film solar cells.     

基于化学监督的超(超)临界机组关键控制节能指标分析及建议

针对超(超)临界机组参数提高、材质升级,化学技术监督中的监督指标对机组经济性和可靠性影响较大的问题,本文通过机组典型案例分析、技术监督报告、现场实测等,对目前化学监督中影响较大的、关键的技术指标进行了系统性的分析研究。研究结果找出了6项化学监督中超(超)临界机组关键的、影响较大的控制监督指标,且提出了指标控制值和控制方法。这项系统性研究分析方法对指导超(超)临界机组化学监督具有重要的借鉴作用,以控制超(超)临界机组因参数提高和材质升级带来的新问题和新挑战。     

薄膜铂电阻元件稳定性测试与分析

高端军事应用环境对测温传感器提出了小结构、高精度、良好的长期稳定性等要求,采用溅射方式制备的薄膜铂电阻元件成为了首选。通过分析薄膜铂电阻元件的结构、工艺,探讨影响稳定性的主要因素,包括薄膜缺陷、杂质、电迁移、结构封装应用与温度应力等。选择薄膜铂电阻在水三相点下的电阻值作为稳定性的比较基准,设计了一款不大于3mK的高精度测试系统。通过对薄膜铂电阻元件进行高温电寿命试验和温度冲击试验,评估得出薄膜铂电阻元件长期稳定性达到10mK,满足设计需求。     

Fabrication of Cu/graphite film/Cu sandwich composites with ultrahigh thermal conductivity for thermal management applications

Effective thermal management of electronic integrated devices with high powder density has become a serious issue, which requires materials with high thermal conductivity (TC). In order to solve the problem of weak bonding between graphite and Cu, a novel Cu/graphite film/Cu sandwich composite (Cu/GF/Cu composite) with ultrahigh TC was fabricated by electro-deposition. The micro-riveting structure was introduced to enhance the bonding strength between graphite film and deposited Cu layers by preparing a rectangular array of micro-holes on the graphite film before electro-deposition. TC and mechanical properties of the composites with different graphite volume fractions and current densities were investigated. The results showed that the TC enhancement generated by the micro-riveting structure for Cu/GF/Cu composites at low graphite content was more effective than that at high graphite content, and the strong texture orientation of deposited Cu resulted in high TC. Under the optimizing preparing condition, the highest in-plane TC reached 824.3 W·m⁻¹·K⁻¹, while the ultimate tensile strength of this composite was about four times higher than that of the graphite film.     

超精密气体静压系统节流器法向随机微振动研究

以无气腔平面节流器为研究对象,对节流器流固耦合法向随机微振动进行了理论仿真和实验研究。受限于节流器厚度与气膜厚度尺寸的差异和输入初始边界条件,建立了节流器的COMSOL仿真简化模型,对节流器-气膜微流场进行双向流固耦合数值模拟。仿真结果表明,节流器的法向随机微振动幅值关于节流器中心对称,且由中心向边缘逐渐增大;微振动幅值随气体入口流速的增大而增大。实验采用纳米级激光测振仪,依次测量供气压力为0.1,0.2,…,0.5 MPa时尺寸为75 mm×50 mm×14 mm的HEXAGON双环联结型节流器多个不同位置的法向振动,实验结果表明,法向随机微振动幅值分布特性与仿真结果一致,关于节流器中心对称,且由中心向边缘逐渐增大,验证了节流器法向微振动的"跷跷板"振动形式;在0.5 MPa供气压力下,边缘振动幅值超过1 nm。对实验数据进行功率谱密度分析,结果表明不同供气压力下法向随机微振动均在9.4 kHz和10.6 kHz处产生较大功率,可认为与节流器-气膜流固耦合系统的固有频率有关。研究结果有效地揭示了节流器法向随机微振动的特性,为气体静压系统避开随机共振区、优化气体静压系统的设计提供了理论指导。     

Inhibition of stress corrosion cracking in 304 stainless steel through titanium ion implantation

The effects of titanium ion implantation on the stress corrosion cracking (SCC) behaviour of 304 austenitic stainless steel were studied. Slow strain rate tests (SSRTs) were conducted on 304 steel in air and in 5?wt-% NaCl solution. The microscopic effects of ion implantation were evaluated by Stopping and Range of Ions in Matter Procedures (SRIM). Fracture morphologies and microstructures were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The fracture surfaces illustrate that ion implantation significantly inhibits the corrosion pits that initiate SCC. A dense passive film, which inhibits SCC, was formed during the ion implantation process. SCC initiation was restrained due to the dense dislocation nets that were generated by titanium ion implantation.

Highlights

• Ion implantation inhibits SCC susceptibility.

• The lack of Cr at the grain boundary leads to the expansion of SCC along the grain boundary.

• Implantation-induced damage leads to high-density dislocations.

• The surface was amorphised due to high-density dislocations.

     

微观表面形貌对螺旋槽液膜密封空化发生的影响

为探索微观表面形貌对液膜密封空化的影响,基于满足质量守恒的JFO空化模型及坐标变换,建立考虑微观表面形貌的双坝区螺旋槽液膜密封数学模型;采用有限体积法离散求解控制方程,综合分析表面粗糙度、周向波度和径向锥度对螺旋槽液膜密封空化发生的影响规律。结果表明:相比而言,密封面计入微观表面形貌后,摩擦副液膜中空穴区发生位置分散且形状不规则;以空化面积比为判据,较大表面粗糙度对液膜空化促生虽起到积极作用,但数据较小,可忽略不计;锥度对液膜中空穴促生和抑制影响有限,波幅的增加显著促进液膜中空穴的发生;高频波数时,正锥度有利于降低液膜空化面积比,抑制空穴。